Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor
Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor
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DOI：
10.1038/s41565-019-0466-2
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发表时间：
2019-07-01
影响因子：
38.3
通讯作者：
Wu, Stephen M.
中科院分区：
文献类型：
--
作者：
Hou, Wenhui;Azizimanesh, Ahmad;Wu, Stephen M.
今天，几乎所有晶体管的主要工作机制都依赖于半导体通道中的电场效应，将其导电性从导通状态调整到不导通的关断状态。随着晶体管不断缩小以提高计算性能，纳米级场效应操作的物理限制开始导致不希望的电流泄漏，这对计算的持续进步是有害的（1,2）。使用一种完全不同的操作机制，我们展示了通过薄膜和铁电体的纳米级应变工程，可以在场效应晶体管几何结构中，在1T'-MoTe2（半金属）相到半导体MoTe2相之间，通过电场诱导应变可逆地切换过渡金属二硫系MoTe2。这种晶体管开关的替代机制避开了传统场效应晶体管的所有静态和动态功耗问题（3,4）。使用应变，我们在室温下实现了通道电导率的大的非易失性变化(G(on)/G（off）近似于10(7)，而G（on)/G（off）在控制装置中近似于0.04）。铁电器件提供了在阿焦耳/位水平上达到亚纳秒非易失性应变开关的潜力（5-7），可以立即应用于超快低功耗非易失性逻辑和存储器(8)，同时也改变了计算架构的格局，因为微电子的传统功率、速度和易失性考虑可能不再存在。
The primary mechanism of operation of almost all transistors today relies on the electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on' state to a non-conducting 'off' state. As transistors continue to scale down to increase computational performance, physical limitations from nanoscale field-effect operation begin to cause undesirable current leakage, which is detrimental to the continued advancement of computing(1,2). Using a fundamentally different mechanism of operation, we show that through nanoscale strain engineering with thin films and ferroelectrics the transition metal dichalcogenide MoTe2 can be reversibly switched with electric-field-induced strain between the 1T'-MoTe2 (semimetallic) phase to a semiconducting MoTe2 phase in a field-effect transistor geometry. This alternative mechanism for transistor switching sidesteps all the static and dynamic power consumption problems in conventional field-effect transistors(3,4). Using strain, we achieve large non-volatile changes in channel conductivity (G(on)/G(off) approximate to 10(7) versus G(on)/G(off) approximate to 0.04 in the control device) at room temperature. Ferroelectric devices offer the potential to reach sub-nanosecond non-volatile strain switching at the attojoule/bit level(5-7), with immediate applications in ultrafast low-power non-volatile logic and memory(8) while also transforming the landscape of computational architectures because conventional power, speed and volatility considerations for microelectronics may no longer exist.