2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices

2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices
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DOI:
10.1063/5.0122768
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发表时间:
2022-11
影响因子:
3.2
通讯作者:
Minseong Park;B. Bae;Taegeon Kim;H. Kum;Kyusang Lee
Minseong Park;B. Bae;Taegeon Kim;H. Kum;Kyusang Lee
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Minseong Park;B. Bae;Taegeon Kim;H. Kum;Kyusang Lee

文献摘要

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异质集成技术允许耦合高度晶格失配的固态膜,包括半导体、氧化物和二维材料,以协同地融合功能。异质结构的形成通常需要两个过程:晶体生长和非破坏性剥离/转移过程的组合使得能够形成高质量的异质结构。虽然衬底和目标膜之间的直接原子相互作用确保了高质量的生长,但是衬底/外延膜界面处的强原子键阻碍了目标膜与衬底的非破坏性分离。或者,2D材料涂覆的化合物半导体衬底可以通过2D材料转移表面的减弱的(但仍然有效的)表面势场,从而允许高质量的外延生长和生长膜的非破坏性剥离。这一观点回顾了二维/三维异质集成技术,沿着与III-V族化合物半导体和氧化物的应用。先进的异质集成方法提供了一种有效的方法来生产各种独立的膜,用于具有独特功能的可堆叠异质结构,可应用于新型电气,光电,神经形态和生物电子系统。
Heterogeneous integration techniques allow the coupling of highly lattice-mismatched solid-state membranes, including semiconductors, oxides, and two-dimensional materials, to synergistically fuse the functionalities. The formation of heterostructures generally requires two processes: the combination of crystalline growth and a non-destructive lift-off/transfer process enables the formation of high-quality heterostructures. Although direct atomic interaction between the substrate and the target membrane ensures high-quality growth, the strong atomic bonds at the substrate/epitaxial film interface hinder the non-destructive separation of the target membrane from the substrate. Alternatively, a 2D material-coated compound semiconductor substrate can transfer the weakened (but still effective) surface potential field of the surface through the 2D material, allowing both high-quality epitaxial growth and non-destructive lift-off of the grown film. This Perspective reviews 2D/3D heterogeneous integration techniques, along with applications of III–V compound semiconductors and oxides. The advanced heterogeneous integration methods offer an effective method to produce various freestanding membranes for stackable heterostructures with unique functionalities that can be applied to novel electrical, optoelectronic, neuromorphic, and bioelectronic systems.