Electric-field control of phase separation and memory effect in Pr0.6Ca0.4MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures
Electric-field control of phase separation and memory effect in Pr0.6Ca0.4MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures
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DOI：
10.1063/1.3584025
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发表时间：
2011-04-25
影响因子：
4
通讯作者：
Ren, T. L.
中科院分区：
文献类型：
--
作者：
Chen, Q. P.;Yang, J. J.;Ren, T. L.
通过在 Pb(Mg1/3Nb2/3)(0.7)Ti0.3O3 基底上生长 Pr0.6Ca0.4MnO3 (PCMO) 薄膜来制备异质结构。结果表明，样品的磁化强度可以通过压电应变通过电场来显着调节，并且效果主要由相分离的变化决定。更有趣的是，磁化强度的电场控制是非易失性的，表现出应变的记忆效应。通过考虑电场引起的应变对 PCMO 能量分布的影响以及由此产生的相分离变化来讨论结果。这项工作有助于探索应变控制良好的相分离演化和磁电耦合效应。 (C) 2011 年美国物理研究所。 [号码：10.1063/1.3584025]
Heterostructures were fabricated by growing Pr0.6Ca0.4MnO3 (PCMO) films on Pb(Mg1/3Nb2/3)(0.7)Ti0.3O3 substrates. It was shown that the magnetizations of the samples can be tuned dramatically by electric fields via piezostrain and the effect is dominated by the change in phase separation. More interestingly, the electric-field control of magnetization is nonvolatile, manifesting a memory effect of strain. The results were discussed by considering the effect of electric-field-induced strain on the energy landscape of PCMO and the resultant change in phase separation. This work is helpful for exploring the evolution of phase separation with well-controlled strains and the magnetoelectric coupling effect. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584025]