Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
复制标题
DOI：
10.1038/35051047
复制
发表时间：
2001-01-04
期刊：
影响因子：
64.8
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Duan, XF;Huang, Y;Lieber, CM
纳米线和纳米管有效地携带电荷和激子，因此是纳米电子学和光电子学的潜在理想构建模块（1,2）。碳纳米管已经在场效应（3,4）和单电子（5,6）晶体管等器件中得到了利用，但用于构建电子电路的纳米管组件的实际效用是有限的，因为还不可能选择性地生长半导体或金属纳米管（7,8）。在这里，我们报道了用磷化铟纳米线组装功能纳米级器件，其电性能由选择性掺杂控制。门电压相关的输运测量表明，纳米线可以预测地合成为n型或p型。这些掺杂的纳米线可以作为纳米级场效应晶体管，并且可以组装成具有整流行为的交叉线p-n结。值得注意的是，p-n结发出强烈的光，可能是迄今为止制造的最小的发光二极管。最后，我们展示了电场定向组装可以用于从纳米线构建块创建高度集成的器件阵列。
Nanowires and nanotubes carry charge and excitons efficiently, and are therefore potentially ideal building blocks for nanoscale electronics and optoelectronics(1,2). Carbon nanotubes have already been exploited in devices such as field-effect(3,4) and single-electron (5,6) transistors, but the practical utility of nanotube components for building electronic circuits is limited, as it is not yet possible to selectively grow semiconducting or metallic nanotubes(7,8). Here we report the assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping. Gate-voltage-dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires function as nanoscale field-effect transistors, and can be assembled into crossed-wire p-n junctions that exhibit rectifying behaviour. Significantly, the p-n junctions emit light strongly and are perhaps the smallest light-emitting diodes that have yet been made. Finally, we show that electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.