Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
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DOI：
10.1063/1.5010956
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发表时间：
2018-03
影响因子：
4
通讯作者：
T. Murai;T. Makino;H. Kato;M. Shimizu;T. Murooka;E. Herbschleb;Yuki Doi;H. Morishita;M. Fujiwara;M. Hatano;S. Yamasaki;N. Mizuochi
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作者：
T. Murai;T. Makino;H. Kato;M. Shimizu;T. Murooka;E. Herbschleb;Yuki Doi;H. Morishita;M. Fujiwara;M. Hatano;S. Yamasaki;N. Mizuochi
金刚石中的氮空位（NV）中心的电荷状态控制对于其应用非常重要，因为NV中心在光照下经历NV中心的负电荷状态（NV-）和中性电荷状态（NV 0）之间的随机电荷状态转变。在这封信中，费米能级的工程nin金刚石结的控制的NV中心的本征（i）层区域的电荷状态进行了演示。通过将掺杂磷的n型层区域（nin）之间的i层区域的尺寸（d）从2 μm改变到10 μm，我们实现了在532 nm激发下i层区域中NV−电荷态布居从60%到80%的逐渐变化，这可以归因于i层区域中的能带弯曲。此外，我们定量地模拟了在i层区域中的费米能级的变化取决于d与各种浓度的杂质在i层区域。
The charge-state control of nitrogen-vacancy (NV) centers in diamond is very important toward its applications because the NV centers undergo stochastic charge-state transitions between the negative charge state (NV−) and the neutral charge state (NV0) of the NV center upon illumination. In this letter, engineering of the Fermi level by a nin diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic (i) layer region. By changing the size (d) of the i-layer region between the phosphorus-doped n-type layer regions (nin) from 2 μm to 10 μm, we realized the gradual change in the NV− charge-state population in the i-layer region from 60% to 80% under 532 nm excitation, which can be attributed to the band bending in the i-layer region. Also, we quantitatively simulated the changes in the Fermi level in the i-layer region depending on d with various concentrations of impurities in the i-layer region.