Room-temperature 1.3 mum emission from InAs quantum dots grown by metal organic chemical vapor deposition
Room-temperature 1.3 mum emission from InAs quantum dots grown by metal organic chemical vapor deposition
复制标题
金属有机化学气相沉积生长的 InAs 量子点的室温 1.3 μm 发射
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Chu
中科院分区：
文献类型：
--
作者：
J. Bloch;J. Shah;W. Hobson;J. Lopata;S. Chu
利用金属有机化学气相沉积技术，制备出了在室温下在1.3 μm范围内有效发射的自组织量子点。它们生长在GaAs上，由覆盖有InGaAs帽层的InAs组成。通过透射电子显微镜测定其密度为2×1010 cm−2。室温光致发光在1.3 μm处显示出36 meV的宽线，对应于量子点基态，晶圆上均匀性好。这种发射的效率只降低了4倍，相对于低温显示样品的高质量。
Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 μm at room temperature. They are grown on GaAs and consist of InAs covered with an InGaAs cap layer. Their density is 2×1010 cm−2 as determined by transmission electron microscopy. Room-temperature photoluminescence shows a 36 meV broad line at 1.3 μm, corresponding to the quantum-dot ground state, with excellent uniformity across the wafer. The efficiency of this emission is reduced only by a factor of 4 with respect to low temperature showing the high quality of the sample.