{001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition
{001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition
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DOI：
10.1063/5.0019967
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发表时间：
2020-09-14
影响因子：
3.2
通讯作者：
Alff, Lambert
中科院分区：
文献类型：
--
作者：
Cardoletti, Juliette;Komissinskiy, Philipp;Alff, Lambert
在这项工作中，我们报道了用脉冲激光沉积的方法在AISI304不锈钢衬底上生长了几乎单一取向的{001}织构的PbZr0：52Ti0：4803铁电薄膜。PT、Al_2O_3和LaNiO_3缓冲层促进了PbZr0：52Ti0：48O_3{001}织构的生长，并在沉积过程中保护衬底免受氧化。用X射线衍射仪和电子背散射衍射仪确定了PbZr0：52Ti0：4803层的主要{001}织构。极化前，薄膜在1 kHz下的介电常数约为350，介电损耗小于5%。薄膜的剩余极化约为16：5µccm(2)，高的矫顽场可达E-c1/4135：9kVcm(-1)。这些PbZr0：52Ti0：4803薄膜在不锈钢上具有良好的性能，在传感器、能量采集器等MEMS领域具有广阔的应用前景。
In this work, we report nearly single oriented {001}-textured ferroelectric PbZr0:52Ti0:48O3 thin films grown by pulsed laser deposition onto AISI 304 stainless steel substrates. Pt, Al2O3, and LaNiO3 buffer layers promote the PbZr0:52Ti0:48O3 {001} texture and protect the substrate against oxidation during deposition. The dominant {001} texture of the PbZr0:52Ti0:48O3 layer was confirmed using x-ray and electron backscatter diffraction. Before poling, the films exhibit a permittivity of about 350 at 1 kHz and a dielectric loss below 5%. The films display a remanent polarization of about 16:5 mu Ccm(2) and a high coercive field of up to E-c 1/4 135:9 kVcm(-1). The properties of these PbZr0:52Ti0:48O3 thin films on stainless steel are promising for various MEMS applications such as transducers or energy harvesters.