Cubic‐structured tin selenide thin film as a novel solar cell absorber
Cubic‐structured tin selenide thin film as a novel solar cell absorber
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DOI：
10.1002/pssa.201533040
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发表时间：
2016-03
期刊：
影响因子：
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通讯作者：
P. K. Nair;E. Barrios-Salgado;M. Nair
中科院分区：
文献类型：
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作者：
P. K. Nair;E. Barrios-Salgado;M. Nair
通过在a = 11.5873 nm的简单立方结构的硫化锡（SnS-CUB）薄膜基层上化学沉积获得具有晶胞尺寸a = 11.9632 nm的简单立方晶体结构（SnSe-CUB）的硒化锡薄膜。以这种方式获得的SnSe-CUB薄膜在加热至300 °C时是热稳定的。其光学带隙为1.4eV。在太阳能电池中厚度为200 nm的这种材料的薄膜可以导致23 mA cm-2的光生成电流密度和最大29 mA cm-2。SnSe-CUB薄膜具有5 × 10−5 Ω−1 cm−1的p型电导率，比正交晶体结构的SnSe薄膜低三个数量级。总体而言，这些特性使SnSe-CUB薄膜成为一种新型太阳能电池吸收材料。
Tin selenide thin film with a simple cubic crystalline structure (SnSe‐CUB) of unit cell dimension a = 11.9632 Å is obtained via chemical deposition on a tin sulfide (SnS‐CUB) thin film base layer of simple cubic structure of a = 11.5873 Å. The SnSe‐CUB films obtained this way are thermally stable while heating to 300 °C. Its optical band gap is 1.4 eV. A thin film of 200 nm in thickness of this material in a solar cell may lead to a light generated current density of 23 mA cm−2 and a maximum of 29 mA cm−2. Thin film of SnSe‐CUB possesses p‐type electrical conductivity of 5 × 10−5 Ω−1 cm−1, which is three orders of magnitude lower than that of SnSe films of orthorhombic crystalline structure. Overall, these characteristics make SnSe‐CUB thin film a novel solar cell absorber material.