Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
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使用 AFM 和电流控制曝光系统进行纳米级光刻的特性
DOI：
10.1143/jjap.37.1565
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发表时间：
1998
影响因子：
1.5
通讯作者：
T. Hashizume
中科院分区：
文献类型：
--
作者：
M. Ishibashi;S. Heike;H. Kajiyama;Y. Wada;T. Hashizume
我们开发了一种使用电流控制曝光系统的原子力显微镜 (AFM) 光刻系统。与常见的恒定偏置反馈系统相比，恒定电流反馈系统显着减少了线路图案宽度的变化。我们在商业负型光刻胶 RD2100N（日立化学公司）上制作线和空间图案，并评估光刻的特性，包括电流-电压（I-V）特性、灵敏度曲线、横截面形状、剂量裕度、分辨率和邻近效应。我们发现，显影的抗蚀剂图案的横截面形状取决于曝光剂量。灵敏度、剂量裕度和分辨率取决于抗蚀剂厚度，15 nm 厚的抗蚀剂可获得 27 nm 的最小线宽。邻近效应比电子束（EB）光刻小得多。我们还评估了抗蚀剂内部的电场映射，并根据所提出的曝光机制解释了 AFM 曝光系统的特性。
We have developed an atomic force microscopy (AFM) lithography system using a current-controlled exposure system. The constant current feedback system significantly reduces variation in the width of the line patterns compared with the common constant bias feedback system. We fabricate line-and-space patterns on a commercial negative-type resist, RD2100N (Hitachi Chemical Co.), and evaluate the lithography's characteristics, including the current-voltage (I-V) characteristics, sensitivity curve, cross-sectional shape, dose-margin, resolution, and proximity effect. We find that the cross-sectional shape of the developed resist pattern depends on the exposure dose. The sensitivity, dose-margin, and resolution depend on the resist thickness and a minimum line width of 27 nm is obtained for a 15-nm-thick resist. The proximity effect is much smaller than that of electron beam (EB) lithography. We also evaluate the electric-field mapping inside the resist and explain the characteristics of the AFM exposure system based on the proposed exposure mechanism.