Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters
Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters
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DOI：
10.1063/1.2883967
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发表时间：
2008-02-18
影响因子：
4
通讯作者：
Cheng, K. Y.
中科院分区：
文献类型：
--
作者：
Chang, Y. C.;Huang, M. L.;Cheng, K. Y.
以Hf（NCH 3C 2 H5）（4）和H2O为前体，在空气暴露的In0.53Ga0.47As/InP（100）衬底上原子层沉积高k介电HfO 2薄膜，发现其具有原子级清晰的无砷氧化物界面，这是费米能级解除钉扎的一个重要方面。然而，使用同步辐射的高分辨率角分辨X射线光电子能谱（XPS）进行仔细而彻底的探测，观察到界面处存在Ga 2 O3，In 2 O3和In（OH）（3）。对于7.8 nm厚的氧化物，金属-氧化物-半导体电容器的电流输运遵循Fowler-Nordheim隧穿机制，并且在V-FB+1 V下显示出类似于10（-8）A/cm（2）的低漏电流密度。测量了表现良好的频率变化电容-电压曲线，并且导出了2 × 10（12）cm（-2）eV（-1）的界面态密度。使用电流传输数据和XPS分别确定了1.8 +/- 0.1 eV的导带偏移和2.9 +/- 0.1 eV的价带偏移。(C)2008年美国物理学会。
Atomic-layer-deposited high kappa dielectric HfO2 films on air-exposed In0.53Ga0.47As/InP (100), using Hf(NCH3C2H5)(4) and H2O as the precursors, were found to have an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level unpinning. A careful and thorough probing, using high-resolution angular-resolved x-ray photoelectron spectroscopy (XPS) with synchrotron radiation, however, observed the existence of Ga2O3, In2O3, and In(OH)(3) at the interface. The current transport of the metal-oxide-semiconductor capacitor for an oxide 7.8 nm thick follows the Fowler-Nordheim tunneling mechanism and shows a low leakage current density of similar to 10(-8) A/cm(2) at V-FB+1 V. Well behaved frequency-varying capacitance-voltage curves were measured and an interfacial density of states of 2x10(12) cm(-2) eV(-1) was derived. A conduction-band offset of 1.8 +/- 0.1 eV and a valence-band offset of 2.9 +/- 0.1 eV have been determined using the current transport data and XPS, respectively. (C) 2008 American Institute of Physics.