Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs
Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs
复制标题
氮Delta掺杂GaAs中单个等电子陷阱的双激子发光
DOI：
10.1143/apex.5.111201
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and H. Yaguchi
中科院分区：
文献类型：
--
作者：
K. Takamiya;T. Fukushima;S. Yagi;Y. Hijikata;T. Mochizuki;M. Yoshita;H. Akiyama;S. Kuboya;K. Onabe;R. Katayama;and H. Yaguchi
本文报道了在氮δ掺杂GaAs中观察到氮-氮对形成的单等电子陷阱的双激子发光。双激子发光强度与激发功率呈二次函数关系，而激子发光强度则随激发功率的增加而线性增加。双激子的结合能被认为是8毫电子伏，这是相当大的比报告的单InAs量子点在GaAs。我们还发现，双激子和激子发射线都显示出完全非偏振和没有精细结构分裂。这适用于偏振纠缠光子对的应用。
We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen–nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.