Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells
Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells
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InGaN/GaN 多量子阱中超快载流子动力学的太赫兹研究
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
P. Jepsen
中科院分区：
文献类型：
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作者：
H. Porte;D. Turchinovich;D. Cooke;P. Jepsen
InGaN/GaN 多量子阱中的超快载流子动力学通过时间分辨太赫兹光谱进行测量。内置压电场最初由光激发的极化载流子屏蔽，并随着载流子复合而逐渐恢复。我们观察到载流子密度的非指数衰减。时间积分光致发光光谱显示了高激发通量下内置压电场的完整屏蔽。我们还观察到太赫兹电导率谱与描述自由载流子响应的简单德鲁德电导率不同，并且与德鲁德-史密斯模型很好地拟合。
Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.