Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium
Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium
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半导体激光增益介质中非平衡动力学的微观分析
DOI：
10.1063/1.4872316
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发表时间：
2014
影响因子：
4
通讯作者：
S. Koch
中科院分区：
文献类型：
--
作者：
J. Hader;J. Moloney;S. Koch
全微观多体计算用于分析强亚皮秒脉冲与倒置半导体量子阱相互作用的情况下的载流子动力学。电子-电子和电子-声子散射是在第二玻恩-马尔可夫能级上计算的。数十飞秒规模的子带内散射被证明可以快速重新填充脉冲放大期间载流子分布中产生的动力学空洞。即使对于低于 100 fs 的脉冲，这也会显着影响脉冲放大及其光谱依赖性。几皮秒时间尺度上的带间散射限制了脉冲半导体激光器可能实现的重复率。
Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.
发射 60 飞秒脉冲的被动锁模外腔半导体激光器
影响因子：
35
作者：
Quarterman A
通讯作者：
Quarterman A