Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM
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通过两种电 AFM 模式对移动电荷载流子进行局部表征:多谐波 EFM 与 sMIM

DOI:
10.1088/2399-6528/aaa85f
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发表时间:
2018-02-01
影响因子:
1.2
通讯作者:
Cheng, Zhihai
Cheng, Zhihai
中科院分区:
其他
文献类型:
--
作者:
Lei, Le;Xu, Rui;Cheng, Zhihai

文献摘要

被引文献

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半导体材料的移动的电荷载流子的表征已经促进了许多二维载流子分布工具的发展。在这里,我们调查的移动的电荷载流子的几个样品的多谐波静电力显微镜(MH-EFM)和扫描微波阻抗显微镜(sMIM)。介绍了这两种方法的基本原理和实验装置。然后,利用sMIM和MH-EFM系统研究了几种典型样品,即标准n型掺杂Si样品、机械剥离和化学气相沉积生长的二硫化钼(MoS 2)薄膜。讨论了这两种模式的区别和缺点。这两种模式都可以提供载流子浓度分布,并具有亚表面灵敏度。它们在样品制备中也具有优势,其中不需要接触电极,并且可以容易地研究绝缘或电隔离的样品。两种方法的基本模式、提取的物理量、介电响应形式以及扫描环境中的寄生电荷导致了实验结果的差异。本研究所描述的技术将有效地促进基础科学和半导体应用的研究。
The characterization of mobile charge carriers of semiconductor materials has spurred the development of numerous two dimensional carrier profiling tools. Here, we investigate the mobile charge carriers of several samples by multi-harmonic electrostatic force microscopy (MH-EFM) and scanning microwave impedance microscopy (sMIM). We present the basic principles and experiment setups of these two methods. And then several typical samples, i.e. a standard n-type doped Si sample, mechanical exfoliation and chemical vapor deposition grown molybdenum disulfide (MoS2) layers are systemically investigated by sMIM and MH-EFM. The difference and (dis)advantages of these two modes are discussed. Both modes can provide carrier concentration profiles and have sub-surface sensitivity. They also have advantages in sample preparation in which contact electrodes are not required and insulating or electrically isolated samples can readily be studied. The basic mode, physics quantities extracted, dielectric response form and parasitic charges in scanning environment result in difference in experiment results for these two kinds of methods. The techniques described in this study will effectively promote research on basic science and semiconductor applications.