Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
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DOI：
10.1117/12.590240
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发表时间：
2005-04
期刊：
影响因子：
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通讯作者：
H. Ryu;K. Ha;J. Chae;O. Nam;Yongjo Park
中科院分区：
文献类型：
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作者：
H. Ryu;K. Ha;J. Chae;O. Nam;Yongjo Park
随着对高功率GaN基蓝紫激光二极管（LD）的需求不断增加，热管理已成为一个重要的问题。我们提出了一种新的方法来确定结温的GaN基半导体激光器的简单，快速，可靠的热性能表征。正向工作电压随温度的大变化有利地用于测量结温。利用这种方法，我们比较了不同衬底和芯片安装方法的LD结构的结温。结果表明，采用GaN衬底或外延向下键合可以显著降低结温。对于外延向下键合的LD，与外延向上键合的LD相比，实现了结温的两倍降低，并且在这种情况下，对于超过100 mW的输出功率，温度升高仅约13度。
With increasing demands for the development of high power GaN-based blue-violet laser diodes (LDs), thermal management has become an important issue. We present a new method to determine junction temperature of GaN-based LDs for simple, fast, and reliable characterization of thermal performances. The large change of forward operation voltage with temperature is advantageously used to measure junction temperature. Using this method, we compare junction temperature of LD structures with different substrates and chip mounting methods. It is found that the junction temperature can be reduced considerably by employing GaN substrates or epi-down bonding. For epi-down bonded LDs, as much as two-fold reduction in junction temperature is achieved compared to epi-up bonded ones and temperature increase in this case is only about 13 degrees for more than 100 mW-output power.