Transition to 1D conduction with decreasing thickness of the crystals of TaS3 and NbSe3 quasi-1D conductors
Transition to 1D conduction with decreasing thickness of the crystals of TaS3 and NbSe3 quasi-1D conductors
复制标题
随着 TaS3 和 NbSe3 准一维导体晶体厚度的减小，过渡到一维传导
DOI：
10.1134/1.1355400
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Pierre Monceau
中科院分区：
文献类型：
--
作者：
S. Zaitsev;V. Pokrovskii;Pierre Monceau
研究发现，随着TaS 3和NbSe 3准一维导体晶体厚度的减小，这些晶体的电导率对温度和电场的依赖性从体样品典型的形式变化为一维电子系统典型的近幂律行为。
It is found that, with decreasing thickness of the crystals of TaS3and NbSe3quasi-1D conductors, the dependences of the conductivity of these crystals on temperature and electric field change from the form typical of bulk samples to a nearly power law behavior typical of 1D electron systems.