The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
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DOI：
10.1063/1.2968201
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发表时间：
2008-08
影响因子：
4
通讯作者：
Chuanbo Li;K. Usami;T. Muraki;H. Mizuta;S. Odal
中科院分区：
文献类型：
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作者：
Chuanbo Li;K. Usami;T. Muraki;H. Mizuta;S. Odal
详细讨论了表面条件对硅（100）衬底上锗纳米线生长的影响。在端接sio2的Si衬底上，可以很容易地生长高密度的锗纳米线。然而，在h端Si衬底上，生长Ge纳米线更为复杂。硅的迁移和催化剂表面天然SiO2覆盖层的形成阻碍了锗纳米线的生长。在HF溶液中去除这一层后，生长出高密度、有序的锗纳米线。锗纳米线垂直交叉，形成两组平行纳米线。发现纳米线沿着⟨110⟩的方向生长。
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ⟨110⟩ directions.