Electrochemically triggered degradation of silicon membranes for smart on-demand transient electronic devices

Electrochemically triggered degradation of silicon membranes for smart on-demand transient electronic devices
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用于智能按需瞬态电子设备的硅膜电化学触发降解

DOI:
10.1088/1361-6528/ab2853
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发表时间:
2019-09-27
期刊:
影响因子:
3.5
通讯作者:
Yin, Lan
Yin, Lan
中科院分区:
材料科学3区
文献类型:
--
作者:
Chen, Yaoxu;Wang, Huachun;Yin, Lan

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瞬态电子学是一种新兴技术,它能使电子设备实现独特的功能转变或物理消失,并且作为防止数据泄露的终极解决方案,在数据安全硬件的潜在应用中日益受到关注。开发硅(Si)的智能触发降解模式仍然是实现先进的不可恢复按需瞬态电子学的关键挑战。在此,我们提出了一种通过锂化实现硅的新型电化学触发瞬态机制,从而能够对硅器件进行完全且可控的破坏。详细研究了随时间变化的锂化影响区域的深度和微观结构,结果表明数小时的锂化足以产生微裂纹并显著促进锂的渗透。提出了有限元模型以证实该机制。对采用商业0.35微米互补金属氧化物半导体技术节点的薄膜硅带和带有金属 - 氧化物 - 半导体场效应晶体管的硅集成电路芯片进行了电化学触发降解,以展示其在商业电子领域的潜在应用。这项工作为关键安全信息系统和绿色消费电子产品中基于硅的器件的多功能触发瞬态提供了新的机遇。
Transient electronics is an emerging technology that enables unique functional transformation or the physical disappearance of electronic devices, and is attracting increasing attention for potential applications in data secured hardware as an ultimate solution against data breaches. Developing smart triggered degradation modalities of silicon (Si) remain the key challenge to achieve advanced non-recoverable on-demand transient electronics. Here, we present a novel electrochemically triggered transience mechanism of Si by lithiation, allowing complete and controllable destruction of Si devices. The depth and microstructure of the lithiation-affected zone over time is investigated in detail and the results suggest a few hours of lithiation is sufficient to create microcracks and significantly promote lithium penetration. Finite element models are proposed to confirm the mechanism. Electrochemically triggered degradation of thin film Si ribbons and Si integrated circuit chips with metal-oxide-semiconductor field-effect transistors from a commercial 0.35 micrometer complementary metal-oxide-semiconductor technology node is performed to demonstrate the potential applications for commercial electronics. This work opens new opportunities for versatile triggered transience of Si-based devices for critical secured information systems and green consumer electronics.