The influence of hopping on modulated photoconductivity
The influence of hopping on modulated photoconductivity
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跳变对调制光电导的影响
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
S. Tobbeche
中科院分区：
文献类型：
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作者：
C. Longeaud;S. Tobbeche
我们开发了考虑多重俘获和跳跃过程的方程来描述无序半导体中的输运现象。将这些方程引入到稳态暗电导率和光电导率以及调制光电导率的数值模拟中。研究了态密度和尝试跳频等参数对实验结果的影响。在18 ~ 300 K的温度范围内对氢化非晶硅薄膜进行了稳态和调制光电导率实验，并与数值模拟结果进行了比较。这种比较表明，后者提供了一个适当的解释，在两个实验中观察到的实验行为。
We have developed equations taking into account both multiple-trapping and hopping processes for describing transport phenomena in disordered semiconductors. These equations have been introduced into a numerical simulation to model the steady state dark conductivity and photoconductivity as well as the modulated photoconductivity. The influence of parameters such as the density of states and attempt-to-hop frequency on the results of these experiments has been investigated. Steady state and modulated photoconductivity experiments have been performed on a hydrogenated amorphous silicon film in the temperature range 18–300 K and the results have been compared with those from the numerical simulation. This comparison shows that the latter provides a suitable interpretation of the experimental behaviours observed in both experiments.