Locally defined quantum emission from epitaxial few-layer tungsten diselenide
Locally defined quantum emission from epitaxial few-layer tungsten diselenide
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DOI：
10.1063/1.5091779
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发表时间：
2019-05
影响因子：
4
通讯作者：
Wei Wu;C. Dass;J. Hendrickson;R. D. Montaño;R. Fischer;Xiaotian Zhang;T. Choudhury;J. Redwing;Yongqiang Wang;M. Pettes
中科院分区：
文献类型：
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作者：
Wei Wu;C. Dass;J. Hendrickson;R. D. Montaño;R. Fischer;Xiaotian Zhang;T. Choudhury;J. Redwing;Yongqiang Wang;M. Pettes
最近，已经观察到从二维（2D）材料（包括WSe 2、WS 2、六边形BN和GaSe）中的点缺陷发出的单光子，其能量驻留在直接电子带隙中。在这里，我们报告单光子发射的名义弱发射间接带隙二维材料通过确定性应变诱导本地化。证明了一种方法，以创建高度空间本地化和光谱良好分离的缺陷发射位点在750-800 nm的制度中的连续外延膜的几层WSe 2合成的多步扩散介导的气体源化学气相沉积技术。为了将机械应变的影响与衬底或介电环境引起的电子结构变化分开，我们创建了空间尺寸为10 μm的大型各向同性蚀刻超尖锐二氧化硅尖端阵列。我们使用弯曲的基础上的小半径的这些提示4 nm的顺序，通过形态单独赋予电子定位效应，作为WSe 2膜经历了均匀的SiO2介电环境中的设备的几何形状选择本调查。当连续的WSe 2膜被转移到SiO2尖端的阵列上时，观察到尖端上的局部发射位点的产率为87%。本报告的结果为将超实验室规模的量子材料集成到全光量子信息应用的光子器件架构中提供了基本指导。最近，已经观察到二维（2D）材料（包括WSe 2，WS 2，六边形BN和GaSe）中的点缺陷发出的单光子，其能量驻留在直接电子带隙中。在这里，我们报告单光子发射的名义弱发射间接带隙二维材料通过确定性应变诱导本地化。证明了一种方法，以创建高度空间本地化和光谱良好分离的缺陷发射位点在750-800 nm的制度中的连续外延膜的几层WSe 2合成的多步扩散介导的气体源化学气相沉积技术。为了将机械应变的影响与衬底或介电环境引起的电子结构变化分开，我们创建了空间尺寸为10 μm量级的大型各向同性蚀刻超尖锐二氧化硅尖端阵列。我们使用弯曲的基础上，这些提示的小半径-在4 nm的顺序-赋予电子定位效应…
Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750–800 nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 μm. We use bending based on the small radius of these tips—on the order of 4 nm—to impart electronic localization effects through morphology alone, as the WSe2 film experiences a uniform SiO2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe2 film was transferred onto an array of SiO2 tips, an ∼87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelines for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750–800 nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 μm. We use bending based on the small radius of these tips—on the order of 4 nm—to impart electronic localization eff...