Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
复制标题
DOI：
10.1063/1.1432764
复制
发表时间：
2002-01-14
影响因子：
4
通讯作者：
Sawaki, N
中科院分区：
文献类型：
--
作者：
Honda, Y;Kuroiwa, Y;Sawaki, N
在（111）硅衬底上采用SiO2栅格掩模模式进行了纤锌矿GaN的选择性金属有机气相外延。在（0.2-0.5）mmx(0.2-0.5) mm的窗口区域内，GaN薄膜没有裂纹。（0004） x射线摇摆曲线的半峰全宽窄至388弧，带边发射宽度为18.6 meV （77 K）。带边发射峰能量发生了红移。在小窗口生长的样品中，红移略有减少。这表明，由于热膨胀系数失配引起的双轴应变在小窗口上部分松弛。(C) 2002年美国物理研究所。
The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO2 grid mask pattern. Within window regions of (0.2-0.5) mmx(0.2-0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows. (C) 2002 American Institute of Physics.