Modifying the electrical properties of graphene by reversible point-ripple formation
Modifying the electrical properties of graphene by reversible point-ripple formation
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DOI：
10.1016/j.carbon.2018.11.076
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发表时间：
2019-03-01
期刊：
影响因子：
10.9
通讯作者：
Cobley, Richard J.
中科院分区：
文献类型：
--
作者：
Alyobi, Mona M. M.;Barnett, Chris J.;Cobley, Richard J.
石墨烯中的应变、波纹和皱纹降低了载流子的迁移率，改变了电子行为。在少层石墨烯中，面内和跨面之间的各向异性被改变，并且可以打开一个带隙。在这里，我们演示了一种在电隔离的几层石墨烯中可逆地诱导点波纹的方法，该方法能够选择用于向下传输测量的层数到单层。在波纹形成过程中，石墨烯的面内和跨平面方块电阻分别增加了78%和699%，证实了石墨烯的非理想载流子迁移率的唯一原因是微观波纹的变化。该方法还可以计算几层石墨烯的层数，当n=n时，它与拉曼光谱和原子力显微镜是互补的。
Strain, ripples and wrinkles in graphene reduce the charge-carrier mobility and alter the electronic behaviour. In few-layer graphene the anisotropy between the in-plane and cross-plane resistivity is altered and a band gap can be opened up. Here we demonstrate a method to reversibly induce point ripples in electrically isolated few-layer graphene with the ability to select the number of layers used for transport measurement down to single layer. During ripple formation the in-plane and cross-plane sheet resistances increase by up to 78% and 699% respectively, confirming that microscopic corrugation changes can solely account for graphene's non-ideal charge-carrier mobility. The method can also count the number of layers in few-layer graphene and is complimentary to Raman spectroscopy and atomic force microscopy when n