Design and realization of E-band 4-bit phase shifter MMIC
Design and realization of E-band 4-bit phase shifter MMIC
复制标题
E频段4位移相MMIC的设计与实现
DOI：
10.1109/icct.2015.7399923
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Jian Zhang
中科院分区：
文献类型：
--
作者：
Tang Liu;Kewu Han;Jian Zhang
首次报道了采用0.1 μ m栅长GaAspHEMT工艺制作的E波段低损耗移相器，具有360 °相移和低插入损耗的特点。该4位移相器由4个1位移相器子电路级联而成，实现了360度全相移。最后，设计、制作了4个分立的1位移相器和4位移相器，并进行了性能测试。测试结果表明，所设计的E波段4位移相器实现了近360度的相移，并且具有很低的插入损耗变化。它为未来毫米波5G NLOS多Gbps高数据速率通信提供了实用潜力。
The first reported E-band low loss phase shifter characterized by 360 degree phase shift and low variation of insertion loss by using 0.1 um gate length GaAs pHEMT process is presented. The presented 4-bit phase shifter was realized by cascading 4 1-bit phase shifter sub-circuit to implement full 360 degree phase shift. Finally, all the 4 separated 1-bit phase shifter and 4-bit phase shifter were designed, fabricated and characterized. The measurement results show the designed E-band 4-bit phase shifter achieve near 360 degree phase shift and has very low variation of insertion loss. It offers a practical potential in the future millimeter-wave 5G NLOS multi-Gbps high data rate communication.