GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors
复制标题
GaN基射频平面叉指金属-绝缘体-半导体变容二极管
DOI：
10.1109/icsict.2004.1435294
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
K. Lau
中科院分区：
文献类型：
--
作者：
C. S. Chu;Y. Zhu;R. Chu;K. Chen;K. Lau
报道了在AlGaN/GaN异质结构上制备的射频平面间指金属-绝缘体-半导体（PIDMIS）变容管的首次演示。PIDMIS变容器具有良好的品质因子（q因子）和调谐范围。基于一个考虑有源通道电容、固定绝缘体电容、寄生电阻和基片漏电流的物理等效电路，讨论了PIDMIS变容管的q因子。实验数据表明，对于相同的衬底结构，质量因子随设计参数的不同而变化。
The first demonstration of radio-frequency planar inter-digitated metal-insulator-semiconductor (PIDMIS) varactors fabricated on AlGaN/GaN heterostructures is reported. The PIDMIS varactors achieved good quality factor (Q-factor) and tuning range. The Q-factor of PIDMIS varactors is discussed, based on a physical equivalent circuit which takes into account the capacitance of the active channel, fixed insulator capacitance, parasitic resistances and leakage current through the substrate. The experimental data shows that for identical substrate structures, the quality factor varies with different design parameters.