Boosting Piezoelectricity under Illumination via the Bulk Photovoltaic Effect and the Schottky Barrier Effect in BiFeO3.
Boosting Piezoelectricity under Illumination via the Bulk Photovoltaic Effect and the Schottky Barrier Effect in BiFeO3.
复制标题
通过 BiFeO3 中的体光伏效应和肖特基势垒效应增强照明下的压电性能。
DOI：
10.1002/adma.202105845
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Heo Y
中科院分区：
文献类型：
--
作者：
Heo Y
压电是由机械能和电能之间的转换引起的关键功能。铁电体中压电性的增强通常是通过复杂的综合方法来实现的，这种方法具有独特的结构边界，即所谓的致形相边界。虽然结构方法是众所周知的，但通过外部刺激增强压电性尚未得到明确的探索，尽管它们不仅具有简单的原位控制而无需任何事先处理要求的优点，而且与其他功能兼容。结果表明，光是提高bifeo3单晶压电性能的重要控制参数。基于压电响应力显微镜和导电原子力显微镜的一系列测量，在照明下，揭示了局部增强的有效压电系数，dzz，最终显示出几乎七倍的增加。通过引入体光伏效应和肖特基势垒效应的两个主要潜在机制，包括开路电压和光电荷载流子密度的作用，用理论模型解释了这一现象。这些结果为光致压电增强提供了关键见解，为多功能光电器件提供了潜力。
Piezoelectricity is a key functionality induced by conversion between mechanical and electrical energy. Enhancement of piezoelectricity in ferroelectrics often has been realized by complicated synthetical approaches to host unique structural boundaries, so‐called morphotropic phase boundaries. While structural approaches are well‐known, enhancing piezoelectricity by external stimuli has yet to be clearly explored, despite their advantages of offering not only simple and in situ control without any prior processing requirement, but compatibility with other functionalities. Here, it is shown that light is a powerful control parameter to enhance the piezoelectric property of BiFeO3single crystals. A series of measurements based on piezoresponse force microscopy and conductive atomic force microscopy, under illumination, reveal a locally enhanced effective piezoelectric coefficient,dzz, eventually showing almost a sevenfold increase. This phenomenon is explained with theoretical models by introducing the two main underlying mechanisms attributed to the bulk photovoltaic effect and Schottky barrier effect, involving the role of open‐circuit voltage and photocharge carrier density. These results provide key insights to light‐induced piezoelectricity enhancement, offering its potential for multifunctional optoelectronic devices.