Breakdown of High-Performance Monolayer MoS2 Transistors
Breakdown of High-Performance Monolayer MoS2 Transistors
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DOI：
10.1021/nn303772b
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发表时间：
2012-11-01
期刊：
影响因子：
17.1
通讯作者：
Kis, Andras
中科院分区：
文献类型：
--
作者：
Lembke, Dominik;Kis, Andras
二维（2D）材料，如单层二硫化钼（MoS 2）是非常有趣的集成在纳米电子器件，其中它们代表了在垂直方向上的小型化的极限。由于存在带隙和亚纳米厚度，单层MoS 2可用于制造具有极高开/关比和极低功耗的晶体管。在这里，我们报告的2D二硫化钼晶体管的发展，由于增强的静电控制性能提高。我们的器件显示出100 μ A/μ m范围内的电流和超过20 μ S/μ m的过电流以及电流饱和。我们还记录了我们的设备的电击穿，发现MoS 2可以支持非常高的电流密度，超过铜的载流能力50倍。我们的研究结果推动了MoS 2的性能极限，并为其在低功耗和低成本模拟和射频电路中的应用开辟了道路。
Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS2 can be used for the fabrication of transistors exhibiting extremely high on/off ratios and very low power dissipation. Here, we report on the development of 2D MoS2 transistors with improved performance due to enhanced electrostatic control. Our devices show currents in the 100 mu A/mu m range and transconductance exceeding 20 mu S/mu m as well as current saturation. We also record electrical breakdown of our devices and find that MoS2 can support very high current densities, exceeding the current-carrying capacity of copper by a factor of 50. Our results push the performance limit of MoS2 and open the way to their use in low-power and low-cost analog and radio frequency circuits.