Electrical properties and structure of contact interface between Ti3SiC2 and p-type GaN
Electrical properties and structure of contact interface between Ti3SiC2 and p-type GaN
复制标题
DOI：
10.1088/1742-6596/379/1/012021
复制
发表时间：
2012-08
期刊：
影响因子：
--
通讯作者：
A. M. Halil;M. Maeda;Yasuo Takahashi
中科院分区：
文献类型：
--
作者：
A. M. Halil;M. Maeda;Yasuo Takahashi
本研究的目的是研究Ti 3SiC 2和p型GaN之间的接触界面的电学性质和结构。为了在GaN上形成Ti 3SiC 2，采用射频磁控溅射法沉积了Ti-Si-C三元薄膜，然后在1073 K下进行了很短时间的退火。研究了接触界面的导电性能。在p型GaN上沉积的非晶Ti-Si-C薄膜具有非欧姆导电性，肖特基势垒高度（SBH）为0.89 eV。通过退火将SBH降低至0.70 eV以形成Ti 3SiC 2。另一方面，在溅射清洁期间GaN表面的延长的Ar离子轰击将沉积的Ti-Si-C膜的SBH降低至0.76 eV。然而，离子轰击的效果在退火后不被保留。
The purpose of the present study is to investigate the electrical properties and structure of the contact interface between Ti3SiC2 and p-type GaN. To form Ti3SiC2 on GaN, a Ti-Si-C ternary film was deposited by radio-frequency magnetron sputtering and then annealed at 1073 K for a very short period. The electric conduction properties of the contact interface were examined. The as-deposited amorphous Ti-Si-C film on p-type GaN shows non-ohmic conduction with a Schottky barrier height (SBH) of 0.89 eV. The SBH is reduced to 0.70 eV by annealing to form Ti3SiC2. On the other hand, a prolonged Ar ion bombardment of the GaN surface during sputter cleaning reduces the SBH of the as-deposited Ti-Si-C film to 0.76 eV. However, the effect of ion bombardment is not retained after annealing.