Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate
Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate
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DOI：
10.1088/0953-2048/23/10/105016
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发表时间：
2010-10-01
影响因子：
3.6
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Mohan, Shyam;Taen, Toshihiro;Hosono, Hideo
报道了在MgO(001)衬底上外延共掺BaFe2As2薄膜的电阻率、霍尔系数、电流-电压特性和磁光成像测量。薄膜的霍尔电阻率对铁磁元件的反常霍尔效应有很大的贡献。在低温下，薄膜的临界电流密度(J(C))接近2 MA cm(-2)。残余态的微分磁光图像给出了类似的J(C)值，也显示了薄膜中存在扩展的缺陷。
We report resistivity, Hall coefficient, current-voltage characteristics and magneto-optical imaging measurements of epitaxial Co-doped BaFe2As2 thin films deposited on an MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from the anomalous Hall effect of ferromagnetic components. The critical current density (J(c)) of the films is similar to 2 MA cm(-2) at low temperatures. Differential magneto-optical images of the remnant state give similar J(c) values and also exhibit the presence of extended defects in the film.