FABRICATION AND PACKAGING OF A RESONANT INFRARED-SENSOR INTEGRATED IN SILICON
FABRICATION AND PACKAGING OF A RESONANT INFRARED-SENSOR INTEGRATED IN SILICON
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DOI：
10.1016/0924-4247(93)00671-p
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发表时间：
1994-05-01
影响因子：
4.6
通讯作者：
ESASHI, M
中科院分区：
文献类型：
--
作者：
CABUZ, C;SHOJI, S;ESASHI, M
介绍了一种新型的集成红外传感器，它采用了硅/二氧化硅谐振微桥。微桥的谐振频率对入射IR功率敏感，这是由于IR辐射的吸收引起的热致应力变化。一个合并的过程中，包括晶圆上的无应力封装，NMOS电路和体硅微加工的说明。单端口静电激励和电容检测被使用，谐振器被电浮置。获得了450 ppm/μ W的吸收功率的相对响应度。
A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/muW of absorbed power were obtained.