Studies of charge collection efficiencies of planar silicon detectors after doses up to and the effect of varying diode configurations and substrate types
Studies of charge collection efficiencies of planar silicon detectors after doses up to and the effect of varying diode configurations and substrate types
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研究剂量达到后平面硅探测器的电荷收集效率以及不同二极管配置和基底类型的影响
DOI：
10.1016/j.nima.2009.01.072
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
Affolder A
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文献类型：
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作者：
Affolder A
平面、分段硅传感器被用于大型强子对撞机（LHC）高能物理实验的跟踪器和顶点探测器，因为它们在粒度、分辨率和速度方面具有无与伦比的性能，同时质量相对较低。欧洲核子研究中心（CERN）的大型强子对撞机（Super-LHC，SLHC）计划中的亮度升级将为这些硅跟踪和顶点探测器系统提供一个困难的环境。对于SLHC ATLAS实验升级中设想的硅微带探测器的区域，在预期的5年实验寿命内，最内层微带层的预期粒子通量高达每平方厘米1× 10151 MeV中子当量粒子（neq），使硅探测器的辐射硬化比以往任何时候都更加重要。我们研究了不同二极管结构（p+-带在n体中，n+-带在n体中，n +-带在p体中）以及衬底类型（浮区，FZ或磁性直拉，MCz）在高达1× 1015 neqcm −2的中子辐照后的电荷收集效率。电荷收集效率的测量已进行了使用128通道模拟，高速（40 MHz）电子和锶电子源。这些测量结果表明，p-in-n传感器的辐射耐受性不足以用于SLHC的微带探测器。FZ和MCz衬底中的n-in-n和n-in-p几何结构都显示出足够的电荷收集，可用于这些区域，n-in-p FZ被选为ATLAS升级的基线技术选择。
Planar, segmented silicon sensors are used for the tracker and vertex detectors of high energy physics experiments at the Large Hadron Collider (LHC) because of their unsurpassed performance in terms of granularity, resolution and speed while offering relatively low mass. The planned luminosity upgrade of the LHC at CERN (Super-LHC, SLHC) will provide a difficult environment for these silicon tracking and vertexing detector systems. For the regions where silicon micro-strip detectors are envisaged in the SLHC ATLAS experimental upgrade, the expected particle fluence at the innermost micro-strip layer is up to 1×10151MeV neutron equivalent particles (neq) per square centimeter over the anticipated 5 year lifespan of the experiment, making the radiation hardening of the silicon detectors more important than ever. We present studies of the charge collection efficiencies of various diode configurations (p+-strip in n-bulk, n+-strip in n-bulk, and n+-strip in p-bulk) as well as substrate types (float zone, FZ or magnetic Czochralski, MCz) after neutron irradiation up to 1×1015neqcm−2. The charge collection efficiency measurements have been carried out using 128 channel analogue, high-speed (40MHz) electronics and a strontium electron source. These measurements indicate that p-in-n sensors are not radiation tolerant enough for use at the SLHC for micro-strip detectors. Both n-in-n and n-in-p geometries in both FZ and MCz substrates have shown sufficient charge collection for use in these regions, with n-in-p FZ chosen as the baseline technology choice for the ATLAS upgrade.