The state of residual stress in TiN films made by physical vapor deposition methods; the state of the art
The state of residual stress in TiN films made by physical vapor deposition methods; the state of the art
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物理气相沉积法制备的TiN薄膜的残余应力状态；
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
A. Perry
中科院分区：
文献类型：
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作者：
A. Perry
现有的透射电子显微镜研究表明，TiN 薄膜中可能存在多种晶格缺陷，如位错环、超微裂纹、捕获的氩及其沉淀，其中给定样品中观察到的精确缺陷取决于薄膜的沉积条件。随着薄膜厚度的增加，纹理和晶粒尺寸也会发生变化。关于晶格参数、衍射峰宽度（表示应变分布）和 X 射线衍射 (XRD) 残余应力的大量数据也已被报道，这些数据都被发现强烈依赖于 TiN 薄膜的沉积条件。这些特性也会随着薄膜的厚度而变化。在目前的工作中，回顾了现有的 XRD 数据及其趋势。虽然很明显 XRD 数据与微观和微观结构变化之间存在相关性，但尚不可能将它们与特定的微观结构特征或晶格缺陷联系起来。状态...
Existing transmission electron microscope studies indicate that a variety of lattice defects such as dislocation loops, ultramicrocracking, and trapped argon and its precipitation can be present in thin TiN films, where the precise defects observed in a given sample depend on the deposition conditions of the film. There are also changes in texture and grain size as the film thickness increases. A considerable amount of data has also been reported on the lattice parameters, diffraction peak widths (which indicate the strain distribution), and x‐ray diffraction (XRD) residual stress, which are all found to depend strongly on the deposition conditions of TiN films. These properties also change through the thickness of the film. In the present work, existing XRD data and their trends are reviewed. While it is clear that correlations exist between the XRD data and microscopic and microstructural changes, it is not yet possible to relate them to specific microstructural features or lattice defects. The state of...