Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm

Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
复制标题

全面研究 CoFeB-MgO 磁隧道结特性,单界面和双界面缩小至 1X nm

DOI:
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发表时间:
2013
期刊:
2013 IEEE International Electron Devices Meeting
影响因子:
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通讯作者:
H. Ohno
H. Ohno
中科院分区:
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文献类型:
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作者:
H. Sato;T. Yamamoto;M. Yamanouchi;S. Ikeda;S. Fukami;K. Kinoshita;F. Matsukura;N. Kasai;H. Ohno

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研究了采用硬掩模工艺制备的尺寸减小到1 × nm的垂直易磁化轴CoFeB-MgO磁性隧道结(p-MTJ)的特性。双界面的CoFeB-MgO p-MTJ比单界面的具有更高的热稳定性,热稳定性可达1 × nm。在直径为20 nmφ的双界面结构的CoFeB-MgO垂直易磁化轴磁性隧道结中,获得了58的热稳定因子和24 μA的本征临界电流。
We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal stability down to 1X nm than that with single-interface. Thermal stability factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.