Lattice distortions and piezoelectric properties in (Bi3.25Nd0.75−xEux)Ti3O12 nanoplates with a- and b-axis orientations
Lattice distortions and piezoelectric properties in (Bi3.25Nd0.75−xEux)Ti3O12 nanoplates with a- and b-axis orientations
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DOI：
10.7567/jjap.53.02bc07
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发表时间：
2014-02
影响因子：
1.5
通讯作者：
M. Kobune;Takuya Kugimiya;Yusaku Kaneko;S. Ueshima;T. Kikuchi;N. Fukumuro;H. Matsuda;K. Fukushima-K.-Fukushi
中科院分区：
文献类型：
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作者：
M. Kobune;Takuya Kugimiya;Yusaku Kaneko;S. Ueshima;T. Kikuchi;N. Fukumuro;H. Matsuda;K. Fukushima-K.-Fukushi
采用高温溅射法在Nb质量分数为0.79%的Nb：TiO2101衬底上制备了厚度为3.0µm的a轴和b轴取向的(Bi3.25Nd0.75−xEux)Ti3O12(BNEuT，x=0-0.75)薄膜，并对其结构和压电性能进行了研究。在x=0.10时，BNEuT薄膜的室温剩余极化(2PR)和有效压电系数(D33)分别达到最大值87µC/cm2和15 pm/V，比未掺杂的(Bi3.25Nd0.75)Ti3O12(BNT)纳米板的室温剩余极化(2PR=65µC/cm2)和有效压电系数(D33=12 pm/V)大1.3倍。X=0.10的BNEuT薄膜具有较高的a轴择优取向，由X射线衍射仪和压电式响应力显微镜的相图观察可知。结果表明，与未掺杂的BNT纳米板相比，适量的Eu3+掺杂使BNT纳米板的八面体产生更大的位移幅度，从而在铁电性的基础上提高了压电性能。
a- and b-axis-oriented (Bi3.25Nd0.75−xEux)Ti3O12 (BNEuT, x = 0–0.75) films of 3.0 µm thickness were fabricated on conductive Nb:TiO2(101) substrates containing 0.79 mass % Nb by high-temperature sputtering at 650 °C, and their structural and piezoelectric characteristics were investigated. The room-temperature remanent polarization (2Pr) and effective piezoelectric coefficient (d33) values for the BNEuT films exhibited maxima of 87 µC/cm2 and 15 pm/V, respectively, at x = 0.10, which were approximately 1.3 times larger than those (2Pr = 65 µC/cm2 and d33 = 12 pm/V) of the nondoped (Bi3.25Nd0.75)Ti3O12 (BNT) nanoplate. The BNEuT film with x = 0.10 had a high a-axis orientation judging from the X-ray diffraction measurement and the observation of the phase image by piezoresponse force microscopy. It is shown that adequate Eu3+ doping of BNT nanoplates produces a larger displacement magnitude of the octahedra than that in the nondoped BNT nanoplate, resulting in an improvement of piezoelectric properties in addition to the ferroelectricity.