A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface
A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface
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外延 GaN 表面上自形成的纳米网络网状 Pt 层
DOI：
10.1016/j.scriptamat.2010.11.036
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发表时间：
2011
影响因子：
6
通讯作者：
P. Chen
中科院分区：
文献类型：
--
作者：
C. Y. Liu;Chia;Yu;P. Chen
热退火后在外延（0001）GaN衬底上形成自形成的纳米网状Pt层。电子背散射衍射分析表明，当网状Pt层在GaN表面形成时，Pt原子在（0001）GaN上以（111）择优取向重新排列。（111）Pt/（0001）GaN界面代表了最有利于能量的堆叠结构。这种独特的网状Pt层在可见光范围内表现出相对较高的透射率，可以用作高功率LED的高反射率/低电阻p-GaN接触。
A self-formed nanonetwork meshed Pt layer formed on the epitaxial (0001) GaN substrate upon thermal annealing. Electron backscatter diffraction analysis shows that, while the meshed Pt layer was forming on the GaN surface, Pt atoms rearranged themselves in a (111)-preferred orientation on (0001) GaN. The (111) Pt/(0001) GaN interface represents the most energy-favored stacking configuration. This unique meshed Pt layer demonstrates a relatively high transmittance in visible range, which can be used as a high-reflectivity/low-resistance p-GaN contact for high-power LEDs.