Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact
Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact
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DOI：
10.1002/pssc.200674790
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
T. Fujii;Norio Tsuyukuchi;Y. Hirose;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
中科院分区：
文献类型：
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作者：
T. Fujii;Norio Tsuyukuchi;Y. Hirose;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
研究了采用p型GaN栅的增强型AlxGa1-xN/GaN异质结场效应晶体管(JHFET)的栅源接触击穿电压、阈值电压(Vth)和导通电阻(RON)等器件性能。在没有表面钝化的情况下，制作了栅长为2μm的Al0.15Ga0.85N/GaN JHFET，获得了阈值电压为+0.55V，栅源和漏源击穿电压分别大于100V和250V的完全增强型JHFET。在VG=3.0V时，RON低至4.5mΩ·cm2。
We have investigated the device performance, such as the breakdown voltages between gate-source contacts and drain-source contacts, threshold voltage (Vth) and on resistance (RON), of enhancement-mode AlxGa1–xN/GaN junction heterostructure field-effect transistors (JHFET) with a p-type GaN gate. Fabricating an Al0.15Ga0.85N/GaN JHFET with a gate length of 2 μm without surface passivation, we have achieved a completely enhancement-mode JHFET with a threshold voltage of +0.55 V, and breakdown voltages between gate-source and drain-source were over 100 V and 250 V, respectively. RON is as low as 4.5 mΩ · cm2 at VG = 3.0 V. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)