Quantum Hall liquid-to-insulator transition in In 1 − x Ga x As/InPt heterostructures
Quantum Hall liquid-to-insulator transition in In 1 − x Ga x As/InPt heterostructures
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DOI：
10.1103/physrevb.55.15431
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发表时间：
1997-06
影响因子：
3.7
通讯作者：
W. Pan;D. Shahar;D. Tsui;H. Wei;M. Razeghi
中科院分区：
文献类型：
--
作者：
W. Pan;D. Shahar;D. Tsui;H. Wei;M. Razeghi
我们报告了In 1− x Ga x As/InP异质结构中量子霍尔液体到绝缘体转变的温度和电流标度研究。当磁场处于临界磁场B c时，ρ xx= 0. 86 h/e 2。此外，B c附近的输运比例为|B-B c| T− κ，其中κ= 0.45±0.05，且作为|B-B c| I-B，其中B= 0.23±0.05。后者可能是由于脏压电介质中的声子发射，或者可能是B c附近的临界行为的结果，其中z= 1.0±0.1和ν= 2.1±0.3从我们的数据中获得。
We report a temperature-and current-scaling study of the quantum Hall liquid-to-insulator transition in an In 1− x Ga x As/InP heterostructure. When the magnetic field is at the critical field B c, ρ xx= 0.86 h/e 2. Furthermore, the transport near B c scales as| B-B c| T− κ with κ= 0.45±0.05, and as| B-B c| I− b with b= 0.23±0.05. The latter can be due to phonon emission in a dirty piezoelectric medium, or can be the consequence of critical behavior near B c, within which z= 1.0±0.1 and ν= 2.1±0.3 are obtained from our data.