TRANSLATIONAL ENERGY DISTRIBUTION OF SI ATOMS DESORBED BY LASER-INDUCED ELECTRONIC BOND BREAKING OF ADATOMS ON SI(111)-(7 X 7)
TRANSLATIONAL ENERGY DISTRIBUTION OF SI ATOMS DESORBED BY LASER-INDUCED ELECTRONIC BOND BREAKING OF ADATOMS ON SI(111)-(7 X 7)
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激光诱导 SI(111)-(7 X 7) 上原子电子键断裂解吸的 Si 原子的平移能量分布
DOI：
10.1103/physrevlett.82.644
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发表时间：
1999
影响因子：
8.6
通讯作者：
K. Tanimura
中科院分区：
文献类型：
--
作者：
J. Kanasaki;K. Iwata;K. Tanimura
研究了用纳秒和飞秒激光脉冲激发Si（111）−（7× 7）表面时，激光诱导吸附原子电子键断裂引起的Si原子脱附。解吸附的Si原子的平移能量分布的特征在于由0.06 eV的峰值能量与0.02 eV的起始能量;该特征与激发激光脉冲的波长、注量和时间宽度无关。这种能量分布以及该过程的其他特征可以通过所提出的吸附原子位点上双孔定位后的声子反冲机制模型来很好地描述。
The desorption of Si atoms caused by the laser-induced electronic bond breaking of adatoms of Si (111)−(7× 7) was studied upon exciting the surface with nanosecond and femtosecond laser pulses. The translational energy distribution of desorbed Si atoms is characterized by a peak energy of 0.06 eV with an onset energy of 0.02 eV; the feature is independent of wavelengths, fluences, and temporal widths of excitation laser pulses. This energy distribution, as well as other characteristic features of the process, is well described by a proposed model of phonon-kick mechanism following the two-hole localization on adatom sites.