Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
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DOI：
10.1557/jmr.2018.302
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发表时间：
2018-09
影响因子：
2.7
通讯作者：
Y. Yamazaki;Yoji Chiba;T. Makino;Shin‐ichiro Sato;N. Yamada;T. Satoh;Y. Hijikata;K. Kojima;Sang-Yun Lee;T. Ohshima
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作者：
Y. Yamazaki;Yoji Chiba;T. Makino;Shin‐ichiro Sato;N. Yamada;T. Satoh;Y. Hijikata;K. Kojima;Sang-Yun Lee;T. Ohshima
单光子源（SPS）是实现用于计算、通信和传感的量子技术的重要构件。为了工业化，需要用作SPS的电可控色心。我们已经证明了在质子束写入（PBW）制备的SiC pn结二极管中的可控硅空位（V_Sis）的产生。PBW成功地用于引入电可控V_Si而不降低二极管性能。V_Si的电致发光（EL）和光致发光（PL）强度与H^+注量的关系表明，EL的发光效率小于PL的发光效率。对于EL，由于PBW引入的每个V_Si周围的电阻区域，载流子（电子和/或空穴）的供应受到限制。结果表明，通过优化光子束条件，进一步改善V_Si的形成过程，使其不存在作为多数载流子去除中心（高阻区）和无辐射中心的缺陷，是实现高灵敏度V_Si量子传感器的关键。
Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (V_Sis) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable V_Si without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from V_Si on H^+ fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each V_Si introduced by PBW. The results suggest that further improvement in the V_Si creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using V_Si.