Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
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DOI：
10.1063/1.5028257
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发表时间：
2018-05
影响因子：
4
通讯作者：
Wei‐Che Sun;Syed Ahmed Al Muyeed;Renbo Song;Jonathan J. Wierer;N. Tansu
中科院分区：
文献类型：
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作者：
Wei‐Che Sun;Syed Ahmed Al Muyeed;Renbo Song;Jonathan J. Wierer;N. Tansu
通过在InGaN/GaN多量子阱（MQW）中集成薄的AlInN阻挡层或夹层（IL），证明了绿色发射的显著增强。这里研究的MQW包含5个周期的InGaN QW，1 nm厚的AlInN IL，和10 nm厚的GaN势垒通过金属有机化学气相沉积生长。为了适应AlInN层的最佳低压（20 Torr）生长，设计了具有变化的压力的生长流序列。将AlInN IL MQW与InGaN/AlGaN/GaN MQW（AlGaN IL MQW）和常规InGaN/GaN MQW进行比较。AlInN IL MQW通过帮助形成如X射线衍射ω-2 θ（ω-2θ）扫描所指示的突变异质界面以及由于势垒生长期间的高温退火时间表而导致的效率改进来提供类似于AlGaN IL的益处。在室温下，AlInN离子液体的多量子阱的光致发光显示出与AlGaN离子液体的多量子阱相似的性能，并且辐射效率（泵浦强度d）是AlGaN离子液体的4.4 -7倍。
Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ∼4–7 times larger radiative efficiency (pump intensity d...