Modeling High-Efficiency Quantum Dot Sensitized Solar Cells
Modeling High-Efficiency Quantum Dot Sensitized Solar Cells
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DOI：
10.1021/nn101534y
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发表时间：
2010-10-01
期刊：
影响因子：
17.1
通讯作者：
Bisquert, Juan
中科院分区：
文献类型：
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作者：
Gonzalez-Pedro, Victoria;Xu, Xueqing;Bisquert, Juan
随着能量转换效率的不断提高，量子点敏化太阳能电池（QDSC）目前受到越来越多的关注，但这些器件缺乏完整的模型。在这里，我们汇编了这种电池的最新发展，以获得高效率的QDSC，模拟性能。通过连续的离子层吸附和反应直接在TiO 2表面上生长CdSe量子点，以确保高量子点负载。ZnS涂层和以前的生长的OS进行了分析。多硫化物电解质和Cu 2S反电极用于提供更高的光电流和填充因子FF。入射光子-电流效率峰值高达82%，在全1太阳照明下，获得，这实际上克服了通常在QDSC中观察到的光电流限制。在1个太阳的全光照下，高达3.84%的高功率转换效率（V-oc = 0.538 V，j（sc）= 13.9 mA/cm（2），FF = 0.51），并且进行的表征和建模表明，为了进一步改进QDSC，必须克服复合。
With energy conversion efficiencies in continuous growth, quantum dot sensitized solar cells (QDSCs) are currently under an increasing interest, but there is an absence of a complete model for these devices. Here, we compile the latest developments in this kind of cells in order to attain high efficiency QDSCs, modeling the performance. CdSe QDs have been grown directly on a TiO2 surface by successive ionic layer adsorption and reaction to ensure high QD loading. ZnS coating and previous growth of OS were analyzed. Polysulfide electrolyte and Cu2S counterelectrodes were used to provide higher photocurrents and fill factors, FF. Incident photon-to-current efficiency peaks as high as 82%, under full 1 sun illumination, were obtained, which practically overcomes the photocurrent limitation commonly observed in QDSCs. High power conversion efficiency of up to 3.84% under full 1 sun illumination (V-oc = 0.538 V, j(sc) = 13.9 mA/cm(2), FF = 0.51) and the characterization and modeling carried out indicate that recombination has to be overcome for further improvement of QDSC.