Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films
Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films
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反应压力对硼掺杂独立式金刚石薄膜沉积和性能的依赖性
DOI：
10.1016/j.apsusc.2009.09.109
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发表时间：
2010-01-01
影响因子：
6.7
通讯作者：
Zou, Guangtian
中科院分区：
文献类型：
--
作者：
Li, Liuan;Li, Hongdong;Zou, Guangtian
在本文中，我们研究了反应压力依赖的硼掺杂的自支撑金刚石薄膜的生长和性能，在不同的硼掺杂水平的热丝化学气相沉积（HFCVD）合成。随着压力的降低，薄膜的生长特征由[1 1 1]和[1 1 0]的混合织构向[1 1 1]织构为主转变。低的反应压力以及高的硼掺杂水平导致载流子浓度（电阻率）的增加（减少）。由于低反应压力，环境中原子氢的高浓度和优选的[111]生长可用于增强硼掺杂。估计的残余应力随着引入硼水平的增加而增加。皇冠版权所有（C）2009由Elsevier B出版。V.保留所有权利。
In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level. Crown Copyright (C) 2009 Published by Elsevier B. V. All rights reserved.