Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures
Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures
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DOI：
10.1063/1.2712165
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发表时间：
2007-05-01
影响因子：
3.2
通讯作者：
van der Laan, Gerrit
中科院分区：
文献类型：
--
作者：
Claydon, Jill S.;Hassan, Sameh;van der Laan, Gerrit
我们用X射线磁性圆二色性研究了Heusler合金Co_2MnGa薄膜在室温下的元素特定磁性。九个薄膜生长的GaAs衬底上的分子束外延和工程变化的化学计量为Co1.86Mn0.99Ga1，Co1.95Mn0.98Ga1，和Co1.97Mn0.96Ga1，厚度为5.3，7.6，和9.7 nm，并与Al覆盖，以防止氧化。和规则分析显示磁矩显着低于理论预测值，特别是在锰总磁矩的情况下。结果不支持的假设，一个大的磁矩是从钴转移到锰，并可能表明，扩散和反应层在100 μ m的厚度可以影响建立一个完整的Heusler结构。(C)2007年，美国物理学会。
We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co2MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co1.86Mn0.99Ga1, Co1.95Mn0.98Ga1, and Co1.97Mn0.96Ga1, with thicknesses of 5.3, 7.6, and 9.7 nm, and were capped with Al to prevent oxidization. Sum rule analysis revealed magnetic moments significantly lower than the values predicted theoretically, especially in the case of the Mn total magnetic moment. The results do not support the hypothesis that a large magnetic moment is transferred from Co to Mn, and may suggest that diffusion and reacted layers at ultrathin thicknesses can effect the establishment of a full Heusler structure. (C) 2007 American Institute of Physics.