Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices
Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices
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DOI：
10.3390/coatings11060665
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发表时间：
2021-05
期刊：
影响因子：
3.4
通讯作者：
T. Oku;Masaya Taguchi;A. Suzuki;Kaede Kitagawa;Yugo Asakawa;Satoshi Yoshida;Masanobu Okita;S. Minami;Sakiko Fukunishi;Tomoharu Tachikawa
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文献类型：
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作者：
T. Oku;Masaya Taguchi;A. Suzuki;Kaede Kitagawa;Yugo Asakawa;Satoshi Yoshida;Masanobu Okita;S. Minami;Sakiko Fukunishi;Tomoharu Tachikawa
制备了聚硅烷层处理的CH3NH3PbI3钙钛矿光伏器件，并对其进行了表征。将氯苯溶液中的Decaphenylcyclopentasilane （DPPS）沉积在钙钛矿层表面，并在140 ~ 260℃下退火。经过dpps处理的器件在环境空气中放置255天后仍保持较高的光转换效率。DPPS的拉曼散射光谱和从头算分子轨道计算表明，它提高了处理器件的空穴传输效率，这从DPPS处理器件的高分流电阻中得到了证实。
CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.