OBSERVATION OF THE RESONANT OPTICAL STARK-EFFECT IN A SEMICONDUCTOR
OBSERVATION OF THE RESONANT OPTICAL STARK-EFFECT IN A SEMICONDUCTOR
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DOI：
10.1103/physrevlett.55.1335
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发表时间：
1985-01-01
影响因子：
8.6
通讯作者：
REIMANN, K
中科院分区：
文献类型：
--
作者：
FROHLICH, D;NOTHE, A;REIMANN, K
这封信首次提出了半导体中共振光学斯塔克效应的观测结果。Cu2O的激子体系非常适合于研究这种效应，因为它具有相当大的结合能和在低温下分辨良好的共振。在可调谐高功率CO2激光器中，1S激子和2P激子在电场作用下发生混合，导致2P吸收线附近的单光子谱发生剧烈变化。甚至线形状的细节也一致地用依赖于频率的非线性极化率来描述。
This Letter presents for the first time the observation of the resonant optical Stark effect in a semiconductor. The excitonic system of Cu 2 O is well suited to the investigation of this effect because of its rather large binding energy and well-resolved resonances at low temperatures. The mixing between the 1 S and 2 P excitons by the electric field of a tunable high-power C O 2 laser leads to drastic changes in the one-photon spectrum around the 2 P absorption line. Even details of the line shape are consistently described in terms of the frequency-dependent nonlinear susceptibility.