Synthesis of sub-20-nm-sized bismuth 1-D structures using gallium-bismuth systems.
Synthesis of sub-20-nm-sized bismuth 1-D structures using gallium-bismuth systems.
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DOI：
10.1021/jp0529873
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发表时间：
2005-08
期刊：
影响因子：
--
通讯作者：
G. Bhimarasetti;M. Sunkara
中科院分区：
文献类型：
--
作者：
G. Bhimarasetti;M. Sunkara
铋(Bi)纳米线是一种有趣的一维体系，其量子限制效应随纳米线直径的变化而表现出来，而合成尺寸小于20 nm的铋纳米线对于理解量子效应具有重要意义。在这里，我们报道了一种制备超细铋纳米线的体相合成方法和一种新的铋纳米结构形态--锥形晶须。这些锥形晶须的长度约为10-20微米，顶端直径为5-10 nm，底部直径为250-500 nm。这种合成方法是基于熔融的镓(Ga)熔体中纳米级晶核的多重形核和基础生长，这是由于Bi在Ga中的低溶解度和Ga-Bi二元系的低共晶温度造成的。采用不同的铋供应方法，在简单的加热和冷却过程中使用不同的变量，我们合成了各种铋纳米结构。
Bismuth (Bi) nanowires are interesting one-dimensional systems due to the significant quantum confinement effects exhibited as a function of the wire diameters, and synthesizing Bi nanowires with sizes below 20 nm is of fundamental importance in understanding quantum effects. Here, we report a bulk synthesis method to synthesize ultrafine Bi nanowires and a new morphology of bismuth nanostructures, tapered whiskers. These tapered whiskers are about 10-20 mum in length and have diameters of 5-10 nm at the tip and 250-500 nm at the base. The synthesis method is based upon the multiple nucleation and basal growth of nanometer scale nuclei from molten gallium (Ga) melts that result from the low solubility of Bi in Ga and the low eutectic temperature of the Ga-Bi binary system. Adopting different methods of supplying bismuth and using variations in simple heating and cooling, we have synthesized a variety of bismuth nanostructures.