Silicon compatible organic light emitting diode
Silicon compatible organic light emitting diode
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DOI：
10.1109/50.350620
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发表时间：
1994-12
影响因子：
4.7
通讯作者：
H. H. Kim-H.;T. M. Miller;E. Westerwick;Y. Kim;E. W. Kwock;M. Morris;M. Cerullo
中科院分区：
文献类型：
--
作者：
H. H. Kim-H.;T. M. Miller;E. Westerwick;Y. Kim;E. W. Kwock;M. Morris;M. Cerullo
作为对用于硅（Si）芯片到芯片连接的单片光电子学目标的努力，我们已经使用重N掺杂硅（Si）作为阴极或P掺杂硅作为阳极来制造有机发光二极管（LED）。在沉积聚合物或分子有机层之前在Si上热生长的薄二氧化硅（SiO/sub 2/）层增强了电子注入到半导体发射层中。在没有薄氧化物层的情况下，从由（2-甲氧基，5-（2 ′-乙基-己氧基）-1，4-亚苯基亚乙烯基）（MEH-PPV）或8-羟基喹啉铝（Alq）制成的LED中观察不到光。对于MEH-PPV和Alq，在SiO/sub 2/ layer的情况下，已经观察到分别高达0.02%和0.5%的内量子效率，并且开启电压同样分别低至2.5V和8V。从LED响应时间的测量，我们确定RC常数和复合时间的运输相关的陷阱的速度限制因素。>
As an effort toward a goal of monolithic optoelectronics for silicon (Si) chip-to-chip connections, we have fabricated organic light emitting diodes (LED's) using either heavily N-doped silicon (Si) as a cathode or P-doped Si as an anode. A thin silicon dioxide (SiO/sub 2/) layer, thermally grown on Si before deposition of a polymer or a molecular organic layer, enhances the electron injection into the semiconducting emissive layer. Without the thin oxide layer, no light was observed from LED's made from either (2-methoxy, 5-(2'-ethyl-hexoxy)-1, 4-phenylene vinylene) (MEH-PPV) or 8-hydroxyquinoline aluminum (Alq). With the SiO/sub 2/ layer,the internal quantum efficiencies as high as 0.02% and 0.5% have been observed for MEH-PPV and Alq, respectively, and the turn-on voltages were as low as 2.5 V and 8 V, again for MEH-PPV and Alq, respectively. From the LED response time measurement, we identified RC constant and the recombination time of transport-related traps as the speed limiting factors. >