Electrodeposition of crystalline silicon directly from silicon tetrachloride in ionic liquid at low temperature
Electrodeposition of crystalline silicon directly from silicon tetrachloride in ionic liquid at low temperature
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DOI：
10.1039/c5ra23085c
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发表时间：
2016-01
期刊：
影响因子：
3.9
通讯作者：
Junling Zhang;Shimou Chen;Haitao Zhang;Suojiang Zhang;Xue Yao;Zhaohui Shi
中科院分区：
文献类型：
--
作者：
Junling Zhang;Shimou Chen;Haitao Zhang;Suojiang Zhang;Xue Yao;Zhaohui Shi
晶体硅（Si）广泛应用于现代电子学中。硅通常通过一系列能量密集型反应（>700 °C）产生。因此，探索更经济、更环保的低温硅晶合成方法具有重要的现实意义。在这篇文章中，我们报道了一种有效的方法，以四氯化硅为原料，在100 °C的低温下，以离子液体（IL）为电解质制备结晶硅。物理化学表征表明，沉积的晶体硅具有金刚石立方晶体结构，表现出主导的（111）取向。此外，深入了解晶体硅的生长机制，揭示了在这里。此外，离子液体结晶硅的智能电沉积平台将为硅的低温冶金开辟一条新的途径。
Crystalline silicon (Si) is widely used in modern electronics. Si is commonly produced through a series of energy-intensive reactions (>700 °C). It is thus urgent and significant to explore more economically and environmentally-benign synthetic strategies for crystalline Si at low temperature. In this contribution, we report an efficient method to prepare crystalline Si from silicon tetrachloride at the low temperature of 100 °C with an ionic liquid (IL) as electrolyte. Physicochemical characterization revealed that as-deposited crystalline Si with a diamond cubic crystal structure exhibited a dominant (111)-orientation. Moreover, in-depth insights into the growth mechanism of crystalline Si was shed light upon herein. Furthermore, the smart electrodepositing platform of crystalline Si from ILs would open up a new avenue for low-temperature metallurgy of Si.