The QD-Flash: a quantum dot-based memory device
The QD-Flash: a quantum dot-based memory device
复制标题
DOI：
10.1088/0268-1242/26/1/014026
复制
发表时间：
2011-01-01
影响因子：
1.9
通讯作者：
Bimberg, D.
中科院分区：
文献类型：
--
作者：
Marent, A.;Nowozin, T.;Bimberg, D.
我们证明了III-V族化合物半导体的一种新型的闪存的巨大潜力。该概念基于自组织III-V量子点（QD）。在这里，最重要的半导体存储器，动态随机存取存储器和闪存的优点合并。具有快速存取时间（10（15）个写入/擦除周期）的非易失性存储器作为最终解决方案似乎是可能的。在300 K下，在InAs/GaAs量子点中，附加Al0.9Ga0.1As势垒的存储时间为1.6 s，而在AlAs基质中，GaSb量子点的存储时间为10（6）年。此外，InAs/GaAs量子点的最小写入时间为6 ns。第一个具有全电子数据访问的原型证明了这一概念的可行性。存储的信息由QD层下面的二维空穴气体读出。时间分辨的漏极电流测量演示了存储器操作。
We demonstrate the large potential of III-V compound semiconductors for a novel type of Flash memory. The concept is based on self-organized III-V quantum dots (QDs). Here the advantages of the most important semiconductor memories, the dynamic random access memory and the Flash are merged. A non-volatile memory with fast access times (10(15) write/erase cycles) as an ultimate solution seems possible. A storage time of 1.6 s at 300 K in InAs/GaAs QDs with an additional Al0.9Ga0.1As barrier was demonstrated and a retention time of 10(6) years is predicted by us for GaSb QDs in an AlAs matrix. In addition, a minimum write time of 6 ns is obtained for InAs/GaAs QDs. First prototypes with all-electrical data access prove the feasibility of the concept. The stored information is read-out by a two-dimensional hole gas underneath the QD layer. Time-resolved drain-current measurements demonstrate the memory operations.