Apparatus for measuring Seebeck coefficients of high‐resistance semiconducting films
Apparatus for measuring Seebeck coefficients of high‐resistance semiconducting films
复制标题
高阻半导体薄膜塞贝克系数测量装置
DOI：
10.1063/1.1137812
复制
发表时间：
1984
影响因子：
1.6
通讯作者：
D. E. Brodie
中科院分区：
文献类型：
--
作者：
M. Trakalo;C. Moore;J. D. Leslie;D. E. Brodie
描述了一种用于测量电阻高达 1011 Ω 的半导体薄膜样品中塞贝克系数的装置。通过样品两端的差异光学加热，在样品上产生温度梯度 ΔT。塞贝克电压ΔV是使用专门设计的输入阻抗为1013Ω的放大器电路测量的。塞贝克系数是从 ΔV 与 ΔT 曲线的斜率获得的。
An apparatus is described for measuring Seebeck coefficients in semiconducting thin‐film samples with resistances as high as 1011 Ω. A temperature gradient ΔT is produced across the sample by means of differential optical heating of the ends of the sample. The Seebeck voltage ΔV is measured using a specially designed amplifier circuit with an input impedance of 1013 Ω. The Seebeck coefficient is obtained from the slope of the plot of ΔV vs ΔT.