Origin of the 4.1-eV luminescence in pure CsI scintillator.
Origin of the 4.1-eV luminescence in pure CsI scintillator.
复制标题
纯 CsI 闪烁体中 4.1-eV 发光的起源。
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Nakayama
中科院分区：
文献类型：
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作者：
Nishimura;Sakata;Tsujimoto;Nakayama
利用双光子光谱法，在宽温度范围（4.5\char21{}300 K）下，观察了与CsI中自俘获激子（STE）相关的4.3 ev和3.7 ev发光带的光谱和衰减时间。结果表明，纯CsI的4.1 eV发光，即所谓的室温闪烁，主要出现在4.3 eV的STE状态，在6 K以下以4.3 eV的STE发光为主，在6 K以上被淬灭，但在4.1 eV的室温下，由3.7 eV STE状态到4.3 eV STE状态的STE热活化再次出现。
The spectra and decay times of the 4.3- and 3.7-eV luminescence bands associated with the self-trapped excitons (STE's) in CsI have been observed in a wide temperature range (4.5\char21{}300 K) by using two-photon spectroscopy. The results reveal that the 4.1-eV luminescence in pure CsI, which is well known as the room-temperature scintillation, appears mainly from the 4.3-eV STE state: the 4.3-eV STE luminescence is dominant below 6 K and is quenched above 6 K, but appears again at 4.1 eV at room temperature by thermal activation of STE's from the 3.7-eV STE state to the 4.3-eV STE state.